Optoelectronic semiconductor chip

ABSTRACT

In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.

An optoelectronic semiconductor chip is specified.

A task to be solved is to specify an optoelectronic semiconductor chipwhich comprises a mirror with a high reflectivity.

This task is solved, inter alia, by an optoelectronic semiconductor chipwith the features of the independent patent claim. Preferred embodimentsare the subject of the other claims.

According to at least one embodiment, the optoelectronic semiconductorchip is intended to generate radiation, in particular near-ultravioletradiation, visible light and/or near-infrared radiation. Thesemiconductor chip is, for example, a light emitting diode chip or alaser diode chip. Preferably the semiconductor chip is an LED chip forgenerating yellow, orange or red light.

According to at least one embodiment, the semiconductor chip comprises asemiconductor layer sequence. The semiconductor layer sequence containsat least one active zone for generating radiation. The radiation has awavelength of maximum intensity L. The active zone is preferably locatedbetween a p-doped side and an n-doped side of the semiconductor layersequence. In particular, the active zone contains a single quantum wellstructure, a multiple quantum well structure and/or a pn junction. Theactive zone extends in particular perpendicularly to a growth directionof the semiconductor layer sequence.

The semiconductor layer sequence is preferably based on a III-V compoundsemiconductor material. The semiconductor material is for example anitride compound semiconductor material such as Al_(n)In_(1−n−m)Ga_(m)Nor a phosphide compound semiconductor material such asAl_(n)In_(1−n−m)Ga_(m)P or an arsenide compound semiconductor materialsuch as Al_(n)In_(1−n−m)Ga_(m)As or such asAl_(n)Ga_(m)In_(1−n−m)As_(k)P_(1−k), where 0≤n≤1, 0≤m≤1 and n+m≤1 and0≤k<1 respectively. Preferably for at least one layer or for all layersof the semiconductor layer sequence 0<n≤0.8, 0.4 m<1 and n+m≤0.95 aswell as 0<k≤0.5. The semiconductor layer sequence may contain dopants aswell as additional components. For the sake of simplicity, however, onlythe essential constituents of the crystal lattice of the semiconductorlayer sequence, i.e. Al, As, Ga, In, N or P, are given, even if thesemay be partially replaced and/or supplemented by small amounts of othersubstances.

According to at least one embodiment, the semiconductor chip comprisesone or more mirrors. The preferably exactly one mirror serves to reflectthe radiation. The mirror is attached to a rear side of thesemiconductor layer sequence, which is opposite a light extraction sideof the semiconductor layer sequence.

According to at least one embodiment, the mirror comprises at least one,preferably exactly one cover layer. The cover layer may be the thickestlayer of the mirror, in particular the thickest layer of the mirror madeof a material transparent to the radiation generated during operation.The cover layer is the layer of the mirror closest to the semiconductorlayer sequence. The cover layer can contact the semiconductor layersequence flat.

According to at least one embodiment, the cover layer is formed with amaterial which is transparent to the radiation generated duringoperation and which is in particular low refractive. Low refractive maymean that the refractive index of the cover layer is at least 0.5 or 1or 1.5 lower than an average refractive index of the semiconductor layersequence. Preferably the cover layer is made of a dielectric material,but can alternatively be made of an electrically conductive material. Amaterial of the cover layer is for example an oxide, a nitride or anoxynitride.

According to at least one embodiment, the cover layer has acomparatively large optical thickness. The term optical thickness refersto a product of a geometrical thickness of the respective layer and itsrefractive index with respect to the wavelength of maximum intensity.Preferably, the cover layer has an optical thickness of at least 0.5 Lor 1.0 L. Alternatively or additionally, this optical thickness is atmost 5 L or 3 L or 2 L or 1.5 L.

The wavelength of maximum intensity L refers here and in the followingto the vacuum wavelength. For example, if the vacuum wavelength is 600nm, a value of 0.5 L corresponds to a thickness of 300 nm. If this valueof 300 nm, for example, denotes an optical thickness and the refractiveindex at the wavelength L is 1.5, for example, the geometric thicknessassigned to the corresponding optical thickness is 300 nm divided by therefractive index, i.e., 200 nm. In other words, the optical thicknessesmentioned are related to the wavelengths of maximum intensity L, wherebythe refractive index of the respective layer must be taken into accountas a divider for conversion to geometric thicknesses. The refractiveindices refer to a temperature of 300 K or to a specified operatingtemperature of the semiconductor chip.

According to at least embodiment, the mirror comprises severalintermediate layers. The number of intermediate layers is preferably notmore than fifteen or ten or seven. The intermediate layers follow thecover layer in a direction away from the semiconductor layer sequence.In particular the intermediate layer follow the cover layer directly. Inparticular, there are two, three, four or five of the intermediatelayers, preferably three or four.

According to at least one embodiment, the intermediate layers are eachmade of a material transparent to the radiation generated duringoperation, such as an oxide, a nitride or an oxynitride. Theintermediate layers may be dielectric or alternatively electricallyconductive. The intermediate layers are made of at least two differentmaterials, wherein each intermediate layer is preferably made of asingle material. In the direction away from the cover layer, theintermediate layers have alternating high and low refractive indices forthe radiation generated during operation. A refractive index differencebetween adjacent intermediate layers and/or towards the cover layer ispreferably at least 0.5 or 1. It is possible that one type ofintermediate layers, in particular the intermediate layers with a lowrefractive index, are of the same material as the cover layer.

According to at least one embodiment, a thickness of at least one of theintermediate layers is not equal to L/4. In other words, at least one ofthe intermediate layers is not a layer as used in conventional Braggmirrors. It is possible that none of the intermediate layers has athickness of L/4. This is in particular true with a tolerance of 0.03 Lor 0.02 L or 0.01 L.

According to at least one embodiment, the mirror includes a metal layer.The metal layer follows the intermediate layers in a direction away fromthe semiconductor layer sequence, in particular the metal layer followsdirectly after the intermediate layers. The metal layer is designed as areflection layer and serves to reflect the radiation generated duringoperation. Radiation components are reflected at the metal layer, whichreach the metal layer from the semiconductor layer sequence through thecover layer and the intermediate layers.

In at least one embodiment, the optoelectronic semiconductor chipcomprises a semiconductor layer sequence with an active zone forgenerating radiation with a wavelength of maximum intensity L. A mirrorfor the radiation is located on a rear side opposite a light extractionside. The mirror comprises a cover layer closest to the semiconductorlayer sequence. The cover layer is made of a material transparent to theradiation and has an optical thickness between 0.5 L and 3 L inclusive.The cover layer is followed in a direction away from the semiconductorlayer sequence by between two and ten inclusive intermediate layers ofthe mirror. The intermediate layers have alternating high and lowrefractive indices for the radiation and are each made of a materialtransparent to the radiation. An optical thickness of at least one ofthe intermediate layers is not equal to L/4. The intermediate layers arefollowed in the direction away from the semiconductor layer sequence byat least one metal layer of the mirror as a reflection layer.

Thus, the mirror is an in particular dielectric Bragg mirror for a widewavelength range, for example from the yellow to the infrared spectralrange. The mirror is preferably used for light emitting diode chipsbased on InGaAlP and/or AlGaAs.

With the mirror described here, increased reflectivity can be achieved,especially of dielectric mirrors, in particular for thin-film LEDs inwhich a growth substrate is removed from a semiconductor layer sequence.This applies, for example, to LED chips based on InGaAlP, which aremanufactured using thin-film technology, or TF technology for short.

A key element in the thin-film technology of InGaAlP/AlGaAs diodes is adielectric-metal mirror. A first part of such a mirror consists of athick layer of a dielectric. The dielectric material of the first layershould have a low refractive index in order to maximize the refractiveindex difference between an adjacent semiconductor material and thefirst mirror layer and thus maximize the critical angle of totalreflection. The metal, usually Au or Ag, behind the dielectric layerreflects light that is not reflected at the first interface.

InGaAs/AlGaAs chips manufactured with Osram TF technology, for exampleTF5 designs and TF6 designs, use mirrors consisting of a thick Si0₂layer, for example with a thickness of 530 nm, and an Au layer behindit. Other variants of the dielectric mirror are found in InGaAlP/AlGaAsdiodes from other manufacturers, but always with only a single layer ofdielectric, for example of MgF2 in the case of EpiStar. For GaNlight-emitting diodes it has been proposed to increase the mirrorreflectivity by introducing a so-called dielectric DBR, i.e. aDistributed Bragg Reflector. Such mirrors consist of pairs of, forexample, Si0₂/Ti0₂ layers with L/4 thickness, see for example thepublication Hongjun Chen et al., “Enhanced Performance of GaN-BasedLight-Emitting Diodes by Using Al Mirror and Atomic LayerDeposition-TiO₂/A1 ₂O₃ Distributed Bragg Reflector Backside Reflectorwith Patterned Sapphire Substrate” in Applied Physics Express, Volume 6,Number 2, from page 022101, from 2013, DOI:https://doi.org/10.7567/APEX.6.022101.

A basic idea of the mirror described here is to use a stack ofpreferably dielectric layers with optimized thickness instead of asingle Si0₂ layer. A classical DBR mirror consists of several L/4 layersof two dielectric materials. The materials should have a largerefractive index difference to maximize reflection of radiation at eachinterface. A disadvantage of this classical idea is that such a designleads to a strong angular dependence and spectral dependence of thereflection. As a result, the L/4 structure does not result in animprovement in specular reflectivity when integrated over the angle.

The Bragg mirror proposed here differs in several points from aclassical DBR:

1) The first dielectric layer near the semiconductor material has a lowrefractive index and is thick to achieve a large critical angle of totalreflection at the first interface.

2) The layers behind it are not L/4 thick to avoid angular and spectralminima. The thickness of these layers is chosen to ensure a highconstructive interference of light reflected at each interface, but atthe same time to show a very weak wavelength dependence and angledependence.

3) The number of underlying layers is preferably reduced to three orfour, to reduce the complexity of the design and to minimize anynegative influence on a thermal conductivity value by the LED.

The dielectric stack described above is used to increase the specularreflectance and brightness especially of InGaAlP light emitting diodes.

In particular, the following aspects have to be considered:

A) Choice of the dielectric material:

As mentioned above, the dielectric materials should be selected so thatthey have a sufficiently high refractive index difference. The firstlayer should be a low refractive index layer. Examples of suitablematerial pairs are: i) SiO₂ with n=1.46 and Nb₂O₅ with n=2.3, ii) SiO₂and TiO₂ with n=2.3 to 2.4, iii) MgF₂ with n=1.37 and Nb₂O₅, iv) MgF₂and TiO₂. The above values are valid for a temperature of 300 K and fora wavelength of 616 nm. The thicknesses of the individual layers arepreferably optimized again for different material choices.

B) Number and thickness of the layers:

The total number of layers can be low, for example three or four. It isadvantageous to limit the number of layers, since a thick dielectricmirror has a negative influence on the thermal properties of the LED. Tomaximize reflectance over a wide angular and spectral range, it isadvantageous that the layers are different from L/4 and that low andhigh refractive index layers have different optical thicknesses.

For example, the first layer is thick, in particular around 520 nm. Thefollowing Nb2O5 layers and SiO2 layers each have thicknesses slightlygreater or less than L/3. For this design, there are no strongreflection minima across the angle.

However, there are equivalent designs:

i) The thickness of the first layer can be chosen larger or smaller.However, if the first layer is too thin, approximately thinner thanapproximately L/2, the reflection improvement is lost.

ii) For the thinner dielectric layers it is not necessary that layers ofthe same material have the same optical thickness. There are equivalentdesigns where each layer has a different optical thickness. Thicknessesgreater than L/4, but less than L/2, preferably L/3+/−20%, are optimal.

iii) It is possible to use different numbers of dielectric layers. Thetotal number of layers can be greater than 4. Good configurations existwith odd and even numbers of layers.

iv) When using an odd number of dielectric layers, individual layers canbe made L/4 thick or thinner. However, if an L/4thickness is chosen,minima in reflectance exist at certain angles. This reduces the totalintegrated reflectance of the mirror.

C) Selection of the metal behind the dielectric layers:

The spectrally broadband reflecting Bragg mirror described here can beused with Au or also with Ag or Al as metal mirror layer or any othermetal mirror behind it. For a good adhesion of the dielectric layers tothe metal mirror, an additional thin adhesive layer is preferably used,for example of a transparent conductive oxide, in short TCO, such asITO, ZnO or the like. Other possible materials are for exampleinsulating oxides like Al₂O₃ or metals like Ti.

D) Use in different chip designs, for example in combination with ap-contact:

i) The dielectric layer stack of the mirror is deposited directly on thesemiconductor material. For contacting the semiconductor, the mirror isphotolithographically structured, for example. The semiconductormaterial is preferably contacted by metallic contacts such as pointcontacts.

ii) Contacting and current spreading is achieved by a thin TCO layer,for example of ITO. The Bragg stack is then deposited on the TCO layerand structured to contact the TCO via metallic contact points. Such TCOcontacts, in particular on GaP, are known, for example, from thepublication DE 10 2017 101 637 A1, whose disclosure content is taken upby reference. Other TCOs such as IZO or ZnO are also possible,individually or in combination.

iii) The use of a Bragg mirror in combination with a TCO layer ascontact layer also has advantages for subsequent processing. Braggmirrors are usually structured by dry etching to avoid undercutting ifthe two dielectric materials have different etch rates in a wet etchprocess. However, dry etching directly on a semiconductor material canintroduce defects and make it difficult to form a low-resistanceelectrical contact. However, dry etching on TCO does not affect thecontact resistance.

iv) For a classical DBR mirror, one would expect a significant variationof the light distribution due to strong angular and spectraldependencies in the reflection pattern. In the case of the broadbandBragg mirror described here, the light distribution remains Lambertian.The light distribution was measured for an LED chip with a single Si0₂layer and with a mirror design described here; no variations in thereflection characteristics were found.

According to at least one embodiment, the semiconductor chip comprisesone or more adhesion promoting layers and/or one or more contact layers.The adhesion promoting layer is preferably located between the metallayer and the last dielectric mirror layer. Preferably, the adhesionpromoting layer borders flat and directly on the metal layer and theadjacent dielectric layer. The contact layer is preferably applieddirectly between the cover layer and the semiconductor layer sequence.

According to at least one embodiment, the adhesion promoting layerand/or the contact layer is made of a transparent conductive oxide.

Transparent conductive oxides, or TCOs for short, are transparent,electrically conductive materials, usually metal oxides, such as zincoxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indiumtin oxide, ITO for short. In addition to binary metal oxygen compounds,such as ZnO, SnO2 or In2O3, ternary metal oxygen compounds such asZn2SnO4, CdSnO3, ZnSnO3, MgIn2O4, GaInO3, Zn2In2O5 or In4Sn3O12 ormixtures of different transparent conductive oxides also belong to thegroup of TCOs. Furthermore, the TCOs do not necessarily correspond to astoichiometric composition and can also be p-doped or n-doped.

According to at least one embodiment, the adhesion promoting layerand/or the contact layer has a relatively small optical thickness. Dueto a small thickness of the adhesion promoting layer and/or the contactlayer it is possible that the latter is optically functionless. Inparticular, the optical thickness of the adhesion promoting layer and/orthe contact layer is at most L/5 or L/7 or L/9. For example, thegeometric thickness of the adhesion promoting layer and/or the contactlayer is at least 0.5 nm or 2 nm or 5 nm and/or at most 250 nm or 100 nmor 40 nm or 30 nm.

According to at least one embodiment, at least 30% or 50% or 80% of theintermediate layers or all intermediate layers have an optical thicknessof L/3. In particular, this optical thickness is present with atolerance of at most L/15 or 0.06 L or L/20 or L/30. It is also possiblethat only one or only two of the intermediate layers have an opticalthickness of L/3, with the tolerances mentioned above.

According to at least one embodiment, the mirror has exactly threeintermediate layers. Alternatively, the mirror has exactly fourintermediate layers. This means that, together with the cover layer, themirror then comprises exactly four or exactly five layers of materialswhich, preferably in the direction away from the semiconductor layersequence, have alternating high and low refractive indices and are madeof materials transparent to the radiation.

According to at least one embodiment, the mirror has at most one or atmost two or at most three intermediate layers which have an opticalthickness of (L/4+N/2)+/−L/20. N is a natural number equal to or greaterthan zero. Alternatively or additionally, the proportion of suchintermediate layers is at most 60% or 40% or 20%, based on a totalnumber of intermediate layers of the mirror.

It is alternatively possible that none of the intermediate layers hassuch an optical thickness. This means that the mirror may be free orsubstantially free of L/4 layers used in conventional Bragg mirrors.

According to at least one embodiment, an optical thickness of the coverlayer is at least 0.9 L or L or 1.1 L or 1.2 L. Alternatively oradditionally, the optical thickness of the cover layer is at most 1.8 Lor 1.6 L or 1.4 L. In particular, the optical thickness of the coverlayer is between 1.15 L and 1.3 L.

According to at least one embodiment, the intermediate layers or atleast one of the intermediate layers or at least half of theintermediate layers have an optical thickness of at least 0.27 L or 0.3L or 0.32 L. Alternatively or additionally, the optical thickness of theintermediate layers concerned is at most 0.43 L or 0.4 L or 0.36 L.Preferably, there are exactly two such intermediate layers.

According to at least one embodiment, the mirror has an intermediatelayer of low refractive index, which is preferably located directlybetween two of the intermediate layers according to the previousparagraph. The intermediate layer in between preferably has an opticalthickness of at least 0.26 L or 0.28 L and/or of at most 0.38 L or 0.35L or 0.31 L. Preferably, a refractive index difference of this lowrefractive intermediate layer to adjacent intermediate layers is atleast 0.04 L or 0.06 L or 0.08 L, respectively.

According to at least one embodiment, an optical thickness of at leastthree of the intermediate layers increases in the direction away fromthe cover layer. This applies in particular to successive intermediatelayers. The mentioned intermediate layers preferably start at the coverlayer. A difference in optical thickness between adjacent intermediatelayers of this type is preferably at least 0.03 L or 0.06 L and/or atmost 0.2 L or 0.15 L or 0.1 L.

According to at least one embodiment, an optical thickness of at leastthree of the intermediate layers increases in a direction away from themetal layer. This preferably applies to directly successive intermediatelayers and in particular starting directly at the metal layer. Adifference in the optical thicknesses of these adjacent intermediatelayers is preferably relatively large and is, for example, at least 0.06L or 0.09 L or 0.11 L and/or at most 0.18 L or 0.14 L or 0.12 L.

According to at least one embodiment, an optical thickness of one ormore of the intermediate layers is at most L/5. In particular, exactlyone such comparatively thin intermediate layer is present. Thisinterlayer or these interlayers are preferably closer to the metal layerthan to the cover layer. For example, the preferably exactly oneintermediate layer with the small thickness is located directly next tothe metal layer.

According to at least one embodiment, a total optical thickness of thecover layer together with all intermediate layers is at least 1.6 L or1.8 L or 2.1 L. Alternatively or additionally, the total thickness is atmost 3.5 L or 2.7 L or 2.3 L. In other words, the total thickness isrelatively small.

For all the above and subsequent optical thicknesses of the cover layerand the intermediate layers, it can be said that n L/2 is added in eachcase, where n is a natural number greater than or equal to one, inparticular equal to one, i.e., n=1. An increase in the optical thicknessby n L/2 does not change the optical effectiveness of the layer inquestion or does not change it significantly. In order to simplify theprevious descriptions of the thicknesses, however, the optionaladditional summand n L/2 is usually not included. However, this summandis preferably omitted, so that n=0.

According to at least one embodiment, the or at least the lastintermediate layer, i.e. the intermediate layer closest to the metallayer, has a thickness unequal to L/4. Preferably the optical thicknessof this intermediate layer is between 0.28 L and 0.45 L or, for n=1,between 0.78 L and 0.95 L. Preferably at least 50% or 75% of the otherintermediate layers or all other intermediate layers have an opticalthickness between 0.255 L and 0.45 L or between 0.755 L and 0.95 L. Thisapplies in particular if the last intermediate layer closest to themetal layer is a highly refractive layer.

According to at least one embodiment, the last interlayer closest to themetal layer has an optical thickness between 0.28 L and 0.48 Linclusive. This applies in particular if the last intermediate layer isa low refractive index layer.

According to at least one embodiment, the intermediate layers,optionally together with the cover layer, are composed of exactly twodifferent materials. This means that the mirror, together with the metallayer, is preferably made of only three different materials.

According to at least one embodiment, the mirror is composed of morethan two transparent materials, for example three or four suchmaterials. It is possible that the intermediate layers comprise at leasttwo such materials and that the cover layer is made of another material.It is also possible that each intermediate layer or each of theintermediate layers together with the cover layer is of a separatematerial.

According to at least one embodiment, the cover layer, all intermediatelayers and the metal layer follow each other directly and preferablyflat. There are then no further components between the above-mentionedcomponents.

According to at least one embodiment, the cover layer and theintermediate layers and optionally the metal layer are each flat layerswith a constant thickness. The cover layer and the intermediate layersand optionally the metal layer may be congruent with each other. It ispossible for the cover layer and/or the intermediate layer to protrudelaterally beyond the metal layer in order to encapsulate the metal layeragainst external environmental influences.

According to at least one embodiment, the semiconductor layer sequenceand/or the contact layer is structured. Thus these layers have atopography that is not planar. The mirror can follow this topography, inparticular true to shape. This means that the cover layer, theintermediate layers and/or the metal layer is then not planar in shape.

According to at least one embodiment, the cover layer and low-refractiveintermediate layers each comprise silicon dioxide or magnesiumdifluoride as material. In particular, Nb₂O₅ or titanium dioxide is usedas material for the high refractive intermediate layers. In particular,the cover layer and the low refractive intermediate layers are made ofsilicon dioxide and the high refractive intermediate layers of Nb₂O₅.The cover layer and the intermediate layers together preferably havealternating high and low refractive indices, starting with the lowrefractive cover layer.

According to at least one embodiment, the metal layer is made of gold, agold alloy, silver, a silver alloy or aluminum or an aluminum alloy. Athickness of the metal layer is preferably at least 50 nm or 100 nm or200 nm. The metal layer is preferably located directly on theintermediate layers.

As an alternative to a metal layer directly on the intermediate layers,at least one adhesion enhancing layer can be applied between theintermediate layers and the metal layer, for example a titanium layer, aplatinum layer and/or a palladium layer, wherein such an adhesionenhancing layer preferably is optically substantially ineffective and inparticular has a thickness of at most 5 nm or 2 nm or 1 nm. In addition,the adhesion enhancing layer can be made of a dielectric oxide such asaluminum oxide or of a TCO.

According to at least one embodiment, the metal layer of the mirror isconnected optically conductively to an electrode of the semiconductorchip or the metal layer forms a part of an electrode. This means that acurrent is applied to the semiconductor layer sequence via the metallayer, in particular to the p-doped side of the semiconductor layersequence. This means that the mirror may be located on the p-doped side.

According to at least one embodiment, the semiconductor chip comprisesone or more electrical through-connections for electrical contacting, inparticular of the p-doped side. One of the through-connection or allthrough-connections preferably run through the mirror, i.e., inparticular through the cover layer and all intermediate layers. Thus themetal layer of the mirror can be electrically connected to thesemiconductor layer sequence or the additional contact layer via thethrough-connections.

According to at least one embodiment, the contact layer extendscontinuously over all through-connections. Thus the contact layer maysimultaneously serve as a current expansion layer. The adhesionpromoting layer may also be structured in at least one contact regionand then need not be electrically conductive.

According to at least one embodiment, the semiconductor layer sequenceis based on the material system AlInGaAs and/or on the material systemInGaAlP. In other words, the semiconductor chip is a component based onan arsenide or a phosphide. The wavelength of maximum intensity L ispreferably at least 570 nm or 590 nm and/or at most 950 nm or 840 nm or700 nm. In particular, red light is generated with the semiconductorchip during normal operation.

In the following, an optoelectronic semiconductor chip described here isexplained in more detail with reference to the drawing using exemplaryembodiments. Identical reference signs indicate identical elements inthe individual figures. However, no scale references are shown;individual elements may be shown in exaggerated size for betterunderstanding.

In the figures:

FIG. 1 shows a schematic sectional view of an example of anoptoelectronic semiconductor chip described here,

FIGS. 2 and 3 schematic sectional views of modifications ofsemiconductor chips,

FIGS. 4 and 5 schematic sectional views of exemplary embodiments ofoptoelectronic semiconductor chips described here,

FIG. 6 shows schematically a reflectivity as a function of the thicknessof the cover layer of a modification and an exemplary embodiment of anoptoelectronic semiconductor chip described here,

FIG. 7 shows a schematic comparison of the reflectivity of differentsemiconductor chips,

FIGS. 8A to 8G shows schematic representations of reflectivity formodification and exemplary embodiments of semiconductor chips versusangle of incidence and versus wavelength,

FIG. 9 shows a schematic representation of a dependence of the radiatedintensity on a radiation angle, and

FIGS. 10 to 14 schematic sectional views of exemplary embodiments ofoptoelectronic semiconductor chips described here.

FIG. 1 shows an exemplary embodiments of a semiconductor chip 1. Thesemiconductor chip 1 comprises a semiconductor layer sequence 2, inwhich an active zone 23 is located between a p-doped side 21 and ann-doped side 22.

A mirror 3 is located directly on the semiconductor layer sequence 2 toreflect radiation generated during operation in the active zone 23,which has a wavelength of maximum intensity L. The mirror 3 comprises acover layer 31 which is directly adjacent to the semiconductor layersequence 2. The cover layer 31 may be the thickest layer of the mirror3. The cover layer 31 has a relatively low refractive index.

In a direction away from the cover layer 31, the mirror 3 comprisesseveral intermediate layers 32, 33. The intermediate layers 32, 33,preferably together with the cover layer 31, have alternating high andlow refractive indices.

The intermediate layers 32, 33 are directly followed in the directionaway from the semiconductor layer sequence 2 by a metal layer 39 as areflection layer. The metal layer 39 is preferably made of gold,alternatively of silver.

The intermediate layers 32, 33 of mirror 3 form a modified Bragg mirror,in particular together with the cover layer 31. All intermediate layers32, 33 have an optical thickness different from L/4, unlike in a classicBragg mirror. This allows a reduced spectral dependence and angledependence of the reflection behavior to be achieved.

The cover layer 31, for example, is made of silicon dioxide with athickness of 520 nm. The first intermediate layers 32 are for examplemade of Nb₂O₅ with a thickness of 95 nm. The second intermediate layer33 is for example made of silicon dioxide with a thickness of 120 nm. Ata wavelength of maximum intensity L of 616 nm and at room temperature,the corresponding optical thicknesses of these layers are 0.35 and 0.28L, as shown in FIG. 1. The cover layer 31 has an optical thickness of1.23 L. Depending on the wavelength of maximum intensity L, thegeometric thicknesses must be adjusted.

The values given for the optical thicknesses are preferably valid with atolerance of 0.03 L or 0.02 L maximum, in particular with regard to theintermediate layers 32, 33.

FIG. 2 shows a modification 1′ of a semiconductor chip. As in aclassical Bragg mirror, the intermediate layers 32, 33 are each L/4layers, i.e., layers with an optical thickness of L/4. 10.5 pairs oflayers, i.e., 21 layers, are present, for example. The firstintermediate layers 32 are for example made of silicon dioxide and thesecond intermediate layers 33 of Nb₅O₂. Thus, there is a comparativelylarge number of layers. Furthermore, FIG. 2 lacks a thick cover layer,as in the exemplary embodiment of FIG. 1.

In the modification 1′ in FIG. 3, there is a thick cover layer 31 andtwo pairs of intermediate layers 32, 33, each with an optical thicknessof L/4. The materials and geometric layer thicknesses are given asexamples for a wavelength of maximum intensity L of 616 nm in FIG. 3.

In the exemplary embodiment of the semiconductor chip 1, as shown inFIG. 4, three of the intermediate layers 32, 33, 34 are present, whichfollow the cover layer 31. The cover layer 31 has an optical thicknessof approximately 1.22 L. The optical thicknesses of the intermediatelayers 32, 33, 34 increase from the cover layer 31 towards the metallayer 39. The differences in optical thickness between adjacentintermediate layers 32, 33, 34 increase towards the metal layer 39.

The exemplary embodiment of FIG. 5 shows four of the intermediate layers32, 33, 34, 35. For three of the intermediate layers 33, 34, 35, theoptical thickness increases in the direction away from the metal layer39, starting at the metal layer 39. The intermediate layer 32 nearest tothe cover layer 31 has the second highest optical thickness. Theintermediate layer 35 closest to the metal layer 39 is significantlythinner than L/4.

The materials and thicknesses mentioned in FIGS. 4 and 5 are onlyexamples. All layers 31, 32, 33, 34, 35 each have optical thicknessesunequal to L/4. The optical thicknesses of the intermediate layers 32,33, 34, 35, as shown in FIGS. 4 and 5, may also apply in slightlymodified form, for example with a tolerance of not more than 0.04 L or0.02 L each.

FIG. 6 shows a reflectivity R in percent as a function of the thicknessof the cover layer T in nm. Here the exemplary embodiment of thesemiconductor chip 1 from FIG. 1 compared with a modification 1′. Thismodification 1′, as illustrated in FIG. 6, corresponds to themodification 1′ of FIG. 3, but without the intermediate layers 32, 33.

It can be seen from FIG. 6 that for the exemplary embodiment of thesemiconductor chip 1 the reflectivity R is reduced by a too thin coverlayer 31 and that compared to the modification 1′ a reflectivity R isachieved which is about 0.4 percentage points higher.

FIG. 7 compares the reflectivities R for the modification 1′, asexplained in connection with FIG. 6 and based on FIG. 3, as well as themodification 1′ of FIG. 2 and the exemplary embodiment of thesemiconductor chip 1 of FIG. 5. It can be seen that a significantlyincreased reflectivity R can be achieved with the design of thesemiconductor chip 1 of FIG. 5. The reflectivity R, as shown in FIG. 7,refers to the reflectivity integrated over all angles.

In FIGS. 8A to 8F, the reflectivity R is plotted against an angle ofincidence E in degrees and the wavelength λ in nm, for various exemplaryembodiments and modifications. The coding of the reflectivity R is shownin FIG. 8G.

FIG. 8A refers to a modification 1′ with a mirror with a thick silicondioxide layer and a gold layer directly underneath, i.e., the structureof FIG. 3 without the intermediate layers 32, 33.

FIG. 8B illustrates a modification 1′ using 10 pairs of layers,corresponding to 20 layers, of silicon dioxide and Nb₂O₅, with thelowest layer directly on the metal mirror being of Nb₂O₅. The componentin FIG. 8B thus corresponds to the modification 1′ of FIG. 2, butwithout the low refractive intermediate layer 32 nearest to the metallayer 39.

In the modification 1′, as illustrated in FIG. 8C, there are 10.5 pairsof layers, corresponding to 21 layers, as illustrated in FIG. 2.Directly at the metal mirror there is therefore a low refractive indexlayer.

FIG. 8D shows the reflectivity for the exemplary embodiment of thesemiconductor chip 1 according to FIG. 1.

FIG. 8E shows the reflectivity R for the exemplary embodiment of thesemiconductor chip 1 shown FIG. 5.

Finally, FIG. 8F shows the reflectivity R for the modification 1′ ofFIG. 3.

FIGS. 8D and 8E in particular show that a uniformly high reflectivity Rcan be achieved down to comparatively small angles of incidence E, incontrast to FIGS. 8B and 8C. Furthermore, a considerably lower spectraldependence of the reflectivity R can be achieved, in particular atlonger wavelengths above 600 nm.

Due to the strong modulation of the reflectivity R, as shown in FIGS. 8Band 8C, the larger number of layer pairs does not lead to an increasedreflectivity overall. This can also be seen in FIG. 7.

In FIG. 9, a radiated intensity I, normalized to one, is plotted againsta radiation angle A. The modification 1′, as described in FIG. 6, i.e.,the design of FIG. 3 without the intermediate layers 32, 33, is comparedwith the exemplary embodiment of the semiconductor chip 1 of FIG. 1. Inaddition, an ideal Lambertian radiation pattern is illustrated.

FIG. 9 shows that over a wide range of angles, no deviations between theexemplary embodiment 1 and the modification 1′ can be seen. Inparticular in the angular range between +/−70° there are no significantdeviations from a Lambertian radiation pattern. The intensity I refersin particular to a luminous flux averaged over all wavelengths.

In the exemplary embodiment of the semiconductor chip 1 of FIG. 10,several electrical through-connections 5 are formed through layers 31,32, 33 of the mirror 3. The through-connections 5 are preferablymetallic through-connections. Via the through-connections 5 thesemiconductor layer sequence 2 is electrically connected to the metallayer 39 of the mirror 3. The metal layer 39 thus represents a part ofan electrode 6 for supplying the semiconductor chip 1 with current.

The through-connections 5 are, for example, trapezoidal in cross sectionand may optionally become narrower in a direction towards thesemiconductor layer sequence 2. Alternatively, the through-connections 5can also be rectangular in cross-section.

The exemplary embodiment of FIG. 11 comprises an additional contactlayer 4. The contact layer 4 extends over the semiconductor layersequence 2 and covers the through-connections 5 completely. Outside thethrough-connections 5 the contact layer may be removed.

The contact layer 4 is preferably made of a transparent conductive oxidesuch as ITO. A thickness of the contact layer 4 is, for example, between15 nm and 30 nm and is therefore preferably so thin that it has nosignificant influence on the optical properties of the mirror 3 and/orthe semiconductor chip 1. Such a contact layer 4 is preferably alsopresent in the examples of FIGS. 1, 4 and 5. If the contact layer 4 hasa greater thickness and becomes optically effective, the thicknesses ofthe cover layer 31 and the intermediate layers 31, 32, 33, 34 may haveto be adjusted accordingly to achieve maximum reflectivity.

FIG. 12 illustrates that the cover layer 31 and the intermediate layers32, 33, 34 extend over the entire surface of the metal layer 39. Thelayers 31, 32, 33, 34 are preferably made of an electrically conductivematerial such as a transparent conductive oxide. This means thatthrough-connections, as shown in FIG. 10 or 11, are not necessary. Thecontact layer 4 can also be omitted.

One electrode 6 is located on the light extraction side 10 and may beconnected to a current expansion structure, which is not drawn here. Themetal layer 39 of the mirror 3 can be located on an electrode 6 on acarrier 7. Over regions of the electrode 6 next to the semiconductorlayer sequence 2, an external electrical contact is optionally possible,for example via bonding wires. The electrode 6 on the light extractionside 10 can also be contacted, for example, via a bonding wire. If thecarrier 7 is electrically conductive, a bond wire-free contact can beachieved from the side with the metal layer 39.

The further electrode 6 on the light extraction side 10 is notillustrated in FIGS. 10 and 11. Flip-chip designs are also possible indeviation from the illustrations in FIGS. 10 to 12.

The exemplary embodiments of FIGS. 13A to 13C, each comprises anadditional adhesion promoting layer 8, which is located between themetal layer 39 and the intermediate layer, which is directly on themetal layer 39. According to FIG. 13B, the adhesion promoting layerlayer 8 extends continuously over the metal layer 39 and also completelycovers the through-connections 5, so that the through-connections 5 areovermoulded by the adhesion promoting layer 8. In FIG. 13A, however, theadhesion promoting layer 8 is confined to the boundary between the metallayer 39 and the nearest intermediate layer 32.

In addition, FIG. 13B shows that contact layer 4 is present in additionto the adhesion promoting layer 8. The adhesion promoting layer 8 andthe contact layer 4 may be of the same or different materials.

In FIG. 13C, the adhesion promoting layer 8 is designed as illustratedin FIG. 13A. Additionally, the contact layer 4 is also present.

The adhesion promoting layer 8 is preferably made of a transparentconductive oxide like ITO. A thickness of the adhesion promoting layer8, for example, is between 1 nm and 20 nm and is therefore preferably sothin that the adhesion promoting layer 8 is optically ineffective andhas no or no significant influence on the optical properties of themirror 3 and/or the semiconductor chip 1.

An adhesion promoting layer 8, as shown in FIGS. 13A to 13C, ispreferably also present in all other exemplary embodiments.

FIGS. 14A and 14B each show that the semiconductor layer sequence 2 ofsemiconductor chip 1 is structured. The through-connections 5 arepreferably located in regions of the semiconductor layer sequence 2which are thicker than other regions. This structuring of thesemiconductor layer sequence 2 may prevent that the active zone 23 issupplied with current directly below the electrode 6. The electrode 6directly at the semiconductor layer sequence 2 is formed, for example,by current distribution ridges. In addition, such a structuring mayincrease the light outcoupling efficiency, since light can be deflectedat the structuring. The cover layer 31 and the intermediate layers 32,33 and also the metal layer 39 reproduce the semiconductor layersequence 2 true to form. This means that the mirror 3 extends over thesurface of the semiconductor layer sequence 2, but is not plan, butreflects the topography of the semiconductor layer sequence 2.

FIG. 14B shows that the contact layer 4 is additionally present. Thecontact layer 4 is only applied locally, in each case starting from theat least one assigned through-connection 5. In deviation from theillustration in FIG. 14B, it is possible to set where the active zone 23is to be supplied with current due to the low electrical transverseconductivity of the first side 21 of the semiconductor layer sequence 2.Structuring the semiconductor layer sequence 2 itself can then beomitted.

Unless otherwise indicated, the components shown in the figures followone another, preferably in the order given.

Layers not touching each other in the figures are preferably spacedapart. As far as lines are drawn parallel to each other, thecorresponding surfaces are preferably also aligned parallel to eachother. Likewise, unless otherwise indicated, the relative positions ofthe drawn components to each other are correctly shown in the figures.

The invention is not restricted to the exemplary embodiments by thedescription on the basis of said exemplary embodiments. Rather, theinvention encompasses any new feature and also any combination offeatures, which in particular comprises any combination of features inthe patent claims and any combination of features in the exemplaryembodiments, even if this feature or this combination itself is notexplicitly specified in the patent claims or exemplary embodiments.

This patent application claims the priority of German patentapplications 10 2018 106 001.7 and 10 2018 107 667.3, the disclosurecontent of which are hereby incorporated by reference.

REFERENCE NUMBERS

-   1 optoelectronic semiconductor chip-   1′ modification of a semiconductor chip-   10 light extraction side-   12 rear side-   2 semiconductor layer sequence-   21 p-doped side-   22 n-doped side-   23 active zone-   3 mirror-   31 cover layer-   32 first intermediate layer-   33 second intermediate layer-   34 further intermediate layer-   35 intermediate layer-   39 metal layer-   4 contact layer-   5 electrical through-connection-   6 electrode-   7 carrier-   8 adhesion promoting layer-   A radiation angle-   E angle of incidence in °-   I intensity-   L wavelength of maximal intensity-   R reflectivity in %-   T thickness of the cover layer-   λ wavelength in nm

1. An optoelectronic semiconductor chip with a semiconductor layersequence having an active zone for generating radiation with awavelength of maximum intensity L, and a mirror for the radiation on arear side opposite a light extraction side, where the mirror comprises acover layer located closest to the semiconductor layer sequence, thecover layer is formed with a material transparent to the radiation andhas an optical thickness between 0.5 L and 3 L inclusive, the coverlayer is followed directly by between 2 and 7 inclusive intermediatelayers in a direction away from the semiconductor layer sequence, theintermediate layers have alternately high and low refractive indices forthe radiation and are each made of a material transparent to theradiation, a thickness of at least one of the intermediate layers is notequal to L/4, and the intermediate layers are followed directly in thedirection away from the semiconductor layer sequence by at least onemetal layer as a reflection layer or an adhesion-promotion layer isarranged directly between the intermediate layers and the metal layer.2. The optoelectronic semiconductor chip according to claim 1, wherein acontact layer of a transparent conductive oxide is located directlybetween the cover layer and the semiconductor layer sequence, whereinthe contact layer has a thickness between 2 nm and 300 nm inclusive. 3.The optoelectronic semiconductor chip according to claim 1, wherein themirror contains exactly three or exactly four of the intermediatelayers, wherein the intermediate layers each have an optical thicknessof L/3, with a tolerance of at most 0.06 L.
 4. The optoelectronicsemiconductor chip according to claim 1, in which the cover layer has anoptical thickness between 0.9 L and 1.6 L inclusive.
 5. Theoptoelectronic semiconductor chip according to claim 1, wherein a totaloptical thickness of the cover layer together with all intermediatelayers is between 1.6 L and 2.7 L inclusive, wherein the cover layer andthe intermediate layers together are constructed from exactly twodifferent materials.
 6. The optoelectronic semiconductor chip accordingto claim 1, wherein the cover layer, the intermediate layers and themetal layer follow one another directly and flat, wherein at least thecover layer and the intermediate layers are each layers with a constantthickness and are congruent with one another.
 7. The optoelectronicsemiconductor chip according to claim 1, wherein the cover layer is madeof SiO₂ and the intermediate layers are alternately made of Nb₂O₅ andSiO₂, wherein the metal layer is of gold or silver.
 8. Theoptoelectronic semiconductor chip according to claim 1, wherein themetal layer is ohmically conductively connected to an electrode of thesemiconductor chip or is part of an electrode.
 9. The optoelectronicsemiconductor chip according to claim 1, wherein the mirror is locatedon a p-doped side of the semiconductor layer sequence, wherein aplurality of electrical through-connections for electrically contactingthe p-doped side extend through the mirror.
 10. The optoelectronicOptoelectronic semiconductor chip according to claim 1, m wherein thethrough-connections are each metallic and penetrate the cover layer andall intermediate layers.
 11. The optoelectronic Optoelectronicsemiconductor chip according to claim 9, wherein the contact layerand/or the adhesion promoting layer extends continuously over allthrough-connections.
 12. The optoelectronic Optoelectronic semiconductorchip according to claim 9, wherein, starting from thethrough-connections, the contact layer extends only partially over thesemiconductor layer sequence, so that the contact layer is completely orpartially removed from regions adjacent to the through-connections. 13.The optoelectronic semiconductor chip according to claim 1, wherein thesemiconductor layer sequence is based on AnnGaAs or on InGaAlP and thewavelength of maximum intensity L is between 570 nm and 950 nminclusive.
 14. (canceled)
 15. The optoelectronic semiconductor chipaccording to claim 1, wherein at least 50% of the intermediate layershave an optical thickness of L/3, with a tolerance of not more thanL/15, wherein the low refractive index cover layer and all intermediatelayers are each made of an oxide, a nitride or an oxynitride and areeach dielectric.
 16. The optoelectronic Optoelectronic semiconductorchip according to claim 15, wherein the mirror comprises at most twointermediate layers with an optical thickness of (L/4+N/2)+/−L/20,wherein N is a natural number greater than or equal to zero.
 17. Theoptoelectronic semiconductor chip according to claim 15, wherein anoptical thickness of at least three of the intermediate layers increasesin a direction away from the cover layer, wherein a difference inoptical thickness between adjacent ones of said intermediate layers isbetween 0.03 L and 0.15 L inclusive.
 18. The optoelectronicsemiconductor chip according to claim 15, wherein an optical thicknessof at least three of the intermediate layers increases in a directionaway from the metal layer, wherein a difference in optical thicknessbetween adjacent ones of said intermediate layers is between 0.09 L and0.14 L inclusive.
 19. The optoelectronic semiconductor chip according toclaim 15, wherein an optical thickness of one of the interlayers is atmost L/5, wherein said intermediate layer is closer to the metal layerthan to the cover layer.
 20. The optoelectronic semiconductor chipaccording to claim 15, wherein the intermediate layer closest to themetal layer has an optical thickness between 0.28 L and 0.45 L inclusiveor between 0.78 L and 0.95 L inclusive, wherein at least 50% of theremaining interlayers have an optical thickness between 0.255 L and 0.45L inclusive or between 0.755 L and 0.95 L inclusive, and wherein theintermediate layer closest to the metal layer is a high refractivelayer.
 21. An optoelectronic semiconductor chip comprising, asemiconductor layer sequence having an active zone for generatingradiation with a wavelength of maximum intensity L, and a mirror for theradiation on a rear side opposite a light extraction side, wherein themirror comprises a cover layer located closest to the semiconductorlayer sequence, the cover layer is formed with a material transparent tothe radiation and has an optical thickness between 0.5 L and 3 Linclusive, the cover layer is followed by between inclusive 2 andinclusive 10 intermediate layers in a direction away from thesemiconductor layer sequence, the intermediate layers have alternatelyhigh and low refractive indices for the radiation and are each made of amaterial transparent to the radiation, the intermediate layers arefollowed in the direction away from the semiconductor layer sequence byat least one metal layer as a reflection layer, and high refractiveintermediate layers each have an optical thickness between 0.3 L and 0.4L inclusive and a low refractive intermediate layer therebetween eachhave an optical thickness between 0.26 L and 0.35 L inclusive.